“Perfect” memory that could one day replace three types of storage gets very early prototype — SOT-MRAM is cache, system memory and storage rolled into one

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Industrial Technology Research Institute (ITRI) and Taiwan Semiconductor Manufacturing Company (TSMC) have announced the creation of a SOT-MRAM (spin-orbit torque magnetic random-access memory) array chip, the result of a joint development program first announced in 2022.

Touted as a potential replacement for STT-MRAM (spin-transfer-torque MRAM), the new SOT-MRAM could be used for computing in memory architectures and as an alternative for high-density last-level embedded cache applications. It requires just 1% of the operating electricity consumed by its predecessor and is said to be faster than DRAM.

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